HiSIM: Self-Consistent Surface-Potential MOS-Model Valid Down To Sub-100nm Technologies
نویسنده
چکیده
Surface-potential-based MOSFETmodeling is shown to be the right direction. Model parameters reflect the physical device parameters of advanced technologies directly, and can therefore be even scalable with technology changes. These advantages are demonstrated with HiSIM, the first self-consistent surface-potential model for circuit simulation based on the drift-diffusion approximation and charge descriptions.
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